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Electrical Specifications
TC
= 25
oC, Unless Otherwise Specified.
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
VF
IF
= 8
A
-
-
1.8
V
IF
=
8
A, TC
= 150oC--1.5V
IR
VR
= 1000
V
-
-
100
μA
VR
= 1000
V,
T
C
= 150oC
-
-
500
μA
trr
IF
= 1
A
-
-
85
ns
IF
= 8
A, dIF/dt
= 200
A/μ-
-
100
ns
s
ta
IF
= 8
A, dIF/dt
= 200
A/μ-50-nss
tb
IF
= 8
A, dIF/dt
= 200
A/μ-30-nss
QRR
IF
=
8
A, dIF/dt
= 200
A/μ-
500
-
nC
s
CJ
VR
= 10
V,
I
F
= 0
A
-
30
-
pF
RθJC
--2.0oC/W
DEFINITIONS
VF
= Instantaneous
forward voltage (pw =
300
μs,
D
=
2
%).
IR
= Instantaneous reverse current.
Trr
= Reverse
r
ecovery
ti
me
a
t
d
IF/dt
=
100A/
μa
+ tb.
s
(
See Figure 9),
summation of
t
ta
= Time to
reach
peak
re
verse
cur
rent
at
dI
F/dt
= 100A/μs (See Figure 9).
tb
= Time from peak IRM
t
o
project
ed zero crossing of
IRM
ba
sed on
a straight
line from peak IRM
t
hrough 25% of
IRM
(See Figure 9).
QRR
= Reverse recovery charge.
CJ
= Junction Capacitance.
RθJC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
00.511.522.53
VF, FORWARD VOLTAGE (V)
I
F
, FORWARD CURRENT (A)
1
40
0.5
10
25oC
100oC
175oC
VR, REVERSE VOLTAGE (V)
0
200 400
600
800
200
0.01
0.1
1
10
1000
0.001
25oC
100oC
175oC
I
R
, REVERSE CURRENT (
μ
A)
MUR8100E, RURP8100
?2001 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. C1
2
www.fairchildsemi.com
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